Staff View: Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

Bibliographic Details
Main Authors:	Feng, G., Van Dijken, Sebastiaan., Feng, J., Coey, J., Leo, T., Smith, David.
Format:	Villanova Faculty Authorship
Language:	English
Published:	2008
Online Access:	http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:176080

Main Authors:

Feng, G., Van Dijken, Sebastiaan., Feng, J., Coey, J., Leo, T., Smith, David.

Format:

Villanova Faculty Authorship

Language:

English

Published:

2008

Online Access:

http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:176080

id	vudl:176080
record_format	vudl
institution	Villanova University
collection	Digital Library
modeltype_str_mv	vudl-system:CoreModel vudl-system:ResourceCollection vudl-system:CollectionModel
datastream_str_mv	PARENT-QUERY MEMBER-LIST-RAW PROCESS-MD DC PARENT-LIST-RAW LICENSE STRUCTMAP RELS-EXT MEMBER-QUERY AUDIT LEGACY-METS PARENT-LIST THUMBNAIL AGENTS
hierarchytype
hierarchy_all_parents_str_mv	vudl:176064 vudl:172968 vudl:641262 vudl:3 vudl:1
sequence_vudl_176064_str	0000000006
hierarchy_top_id	vudl:641262
hierarchy_top_title	Villanova Faculty Publications
fedora_parent_id_str_mv	vudl:176064
hierarchy_first_parent_id_str	vudl:176080
hierarchy_parent_id	vudl:176064
hierarchy_parent_title	Feng Gang
hierarchy_sequence_sort_str	0000000006
hierarchy_sequence	0000000006
spelling	Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage. Feng, G. Van Dijken, Sebastiaan. Feng, J. Coey, J. Leo, T. Smith, David. Co40Fe40B20 /MgO single and double barrier magnetic tunnel junctions MTJs were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance TMR ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 mT. The lower TMR ratio for double barrier MTJs can be attributed to the amorphous nature of the middle Co40Fe40B20 free layer, which could not be crystallized during postannealing. A highly asymmetric bias voltage dependence of the TMR can be observed for both single and double barrier MTJs in the as-deposited states and after field annealing at low temperature. The asymmetry decreases with increasing annealing temperature and the bias dependence becomes almost symmetric after annealing at 350°C. Maximum output voltages of 0.65 and 0.85 V were obtained for both single and double barrier MTJs, respectively, after annealing at 300°C, a temperature which is high enough for large TMR ratios but insufficient to completely remove asymmetry from the TMR bias dependence. 2008 Villanova Faculty Authorship vudl:176080 Journal of Applied Physics 105, 2009, 033916-1- 033916-7. en
dc.title_txt_mv	Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
dc.creator_txt_mv	Feng, G. Van Dijken, Sebastiaan. Feng, J. Coey, J. Leo, T. Smith, David.
dc.description_txt_mv	Co40Fe40B20 /MgO single and double barrier magnetic tunnel junctions MTJs were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance TMR ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 mT. The lower TMR ratio for double barrier MTJs can be attributed to the amorphous nature of the middle Co40Fe40B20 free layer, which could not be crystallized during postannealing. A highly asymmetric bias voltage dependence of the TMR can be observed for both single and double barrier MTJs in the as-deposited states and after field annealing at low temperature. The asymmetry decreases with increasing annealing temperature and the bias dependence becomes almost symmetric after annealing at 350°C. Maximum output voltages of 0.65 and 0.85 V were obtained for both single and double barrier MTJs, respectively, after annealing at 300°C, a temperature which is high enough for large TMR ratios but insufficient to completely remove asymmetry from the TMR bias dependence.
dc.date_txt_mv	2008
dc.format_txt_mv	Villanova Faculty Authorship
dc.identifier_txt_mv	vudl:176080
dc.source_txt_mv	Journal of Applied Physics 105, 2009, 033916-1- 033916-7.
dc.language_txt_mv	en
author	Feng, G. Van Dijken, Sebastiaan. Feng, J. Coey, J. Leo, T. Smith, David.
spellingShingle	Feng, G. Van Dijken, Sebastiaan. Feng, J. Coey, J. Leo, T. Smith, David. Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
author_facet	Feng, G. Van Dijken, Sebastiaan. Feng, J. Coey, J. Leo, T. Smith, David.
dc_source_str_mv	Journal of Applied Physics 105, 2009, 033916-1- 033916-7.
format	Villanova Faculty Authorship
author_sort	Feng, G.
dc_date_str	2008
dc_title_str	Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
description	Co40Fe40B20 /MgO single and double barrier magnetic tunnel junctions MTJs were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance TMR ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 mT. The lower TMR ratio for double barrier MTJs can be attributed to the amorphous nature of the middle Co40Fe40B20 free layer, which could not be crystallized during postannealing. A highly asymmetric bias voltage dependence of the TMR can be observed for both single and double barrier MTJs in the as-deposited states and after field annealing at low temperature. The asymmetry decreases with increasing annealing temperature and the bias dependence becomes almost symmetric after annealing at 350°C. Maximum output voltages of 0.65 and 0.85 V were obtained for both single and double barrier MTJs, respectively, after annealing at 300°C, a temperature which is high enough for large TMR ratios but insufficient to completely remove asymmetry from the TMR bias dependence.
title	Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
title_full	Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
title_fullStr	Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
title_full_unstemmed	Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
title_short	Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
title_sort	annealing of cofeb/mgo based single and double barrier magnetic tunnel junctions: tunnel magnetoresistance, bias dependence, and output voltage.
publishDate	2008
normalized_sort_date	2008-01-01T00:00:00Z
language	English
collection_title_sort_str	annealing of cofeb/mgo based single and double barrier magnetic tunnel junctions: tunnel magnetoresistance, bias dependence, and output voltage.
fgs.type_txt_mv	http://fedora.info/definitions/v4/repository#Resource http://fedora.info/definitions/v4/repository#Container http://www.w3.org/ns/ldp#Resource http://www.w3.org/ns/ldp#Container http://www.w3.org/ns/ldp#BasicContainer http://www.w3.org/ns/ldp#RDFSource
fgs.createdBy_txt_mv	fedoraAdmin
relsext.hasModel_txt_mv	http://hades.library.villanova.edu:8080/rest/vudl-system:CoreModel http://hades.library.villanova.edu:8080/rest/vudl-system:ResourceCollection http://hades.library.villanova.edu:8080/rest/vudl-system:CollectionModel
relsext.isMemberOf_txt_mv	http://hades.library.villanova.edu:8080/rest/vudl:176064
relsext.itemID_txt_mv	oai:digital.library.villanova.edu:vudl:176080
fgs.lastModifiedBy_txt_mv	fedoraAdmin
fgs.label_txt_mv	Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
relsext.sortOn_txt_mv	title
relsext.sequence_txt_mv	vudl:176064#6
fgs.createdDate_txt_mv	2013-01-22T05:16:31.404Z
relsext.hasLegacyURL_txt_mv	http://digital.library.villanova.edu/Villanova%20Digital%20Collection/Faculty%20Fulltext/Feng%20Gang/FengGang-f32d3502-6648-43f3-b660-d7cb1b5def36.xml
fgs.state_txt_mv	Active
fgs.lastModifiedDate_txt_mv	2022-08-25T18:28:21.400Z
fgs.ownerId_txt_mv	diglibEditor
has_order_str	no
agent.name_txt_mv	Falvey Memorial Library, Villanova University klk
license.mdRef_str	http://digital.library.villanova.edu/copyright.html
license_str	protected
has_thumbnail_str	true
THUMBNAIL_contentDigest_digest_str	203c69e18f4f46c81e9892448d2c07cd
first_indexed	2014-01-11T22:38:07Z
last_indexed	2022-08-25T18:28:28Z
_version_	1785892959073337344
subpages

vudl:176080

record_format

vudl

institution

Villanova University

collection

Digital Library

modeltype_str_mv

vudl-system:CoreModel
vudl-system:ResourceCollection
vudl-system:CollectionModel

datastream_str_mv

PARENT-QUERY
MEMBER-LIST-RAW
PROCESS-MD
DC
PARENT-LIST-RAW
LICENSE
STRUCTMAP
RELS-EXT
MEMBER-QUERY
AUDIT
LEGACY-METS
PARENT-LIST
THUMBNAIL
AGENTS

hierarchytype

hierarchy_all_parents_str_mv

vudl:176064
vudl:172968
vudl:641262
vudl:3
vudl:1

sequence_vudl_176064_str

0000000006

hierarchy_top_id

vudl:641262

hierarchy_top_title

Villanova Faculty Publications

fedora_parent_id_str_mv

vudl:176064

hierarchy_first_parent_id_str

vudl:176080

hierarchy_parent_id

vudl:176064

hierarchy_parent_title

Feng Gang

hierarchy_sequence_sort_str

0000000006

hierarchy_sequence

0000000006

spelling

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.
Feng, G.
Van Dijken, Sebastiaan.
Feng, J.
Coey, J.
Leo, T.
Smith, David.
Co40Fe40B20 /MgO single and double barrier magnetic tunnel junctions MTJs were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance TMR ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 mT. The lower TMR ratio for double barrier MTJs can be attributed to the amorphous nature of the middle Co40Fe40B20 free layer, which could not be crystallized during postannealing. A highly asymmetric bias voltage dependence of the TMR can be observed for both single and double barrier MTJs in the as-deposited states and after field annealing at low temperature. The asymmetry decreases with increasing annealing temperature and the bias dependence becomes almost symmetric after annealing at 350°C. Maximum output voltages of 0.65 and 0.85 V were obtained for both single and double barrier MTJs, respectively, after annealing at 300°C, a temperature which is high enough for large TMR ratios but insufficient to completely remove asymmetry from the TMR bias dependence.
2008
Villanova Faculty Authorship
vudl:176080
Journal of Applied Physics 105, 2009, 033916-1- 033916-7.
en

dc.title_txt_mv

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

dc.creator_txt_mv

Feng, G.
Van Dijken, Sebastiaan.
Feng, J.
Coey, J.
Leo, T.
Smith, David.

dc.description_txt_mv

Co40Fe40B20 /MgO single and double barrier magnetic tunnel junctions MTJs were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance TMR ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 mT. The lower TMR ratio for double barrier MTJs can be attributed to the amorphous nature of the middle Co40Fe40B20 free layer, which could not be crystallized during postannealing. A highly asymmetric bias voltage dependence of the TMR can be observed for both single and double barrier MTJs in the as-deposited states and after field annealing at low temperature. The asymmetry decreases with increasing annealing temperature and the bias dependence becomes almost symmetric after annealing at 350°C. Maximum output voltages of 0.65 and 0.85 V were obtained for both single and double barrier MTJs, respectively, after annealing at 300°C, a temperature which is high enough for large TMR ratios but insufficient to completely remove asymmetry from the TMR bias dependence.

dc.date_txt_mv

2008

dc.format_txt_mv

Villanova Faculty Authorship

dc.identifier_txt_mv

vudl:176080

dc.source_txt_mv

Journal of Applied Physics 105, 2009, 033916-1- 033916-7.

dc.language_txt_mv

author

Feng, G.
Van Dijken, Sebastiaan.
Feng, J.
Coey, J.
Leo, T.
Smith, David.

spellingShingle

Feng, G.
Van Dijken, Sebastiaan.
Feng, J.
Coey, J.
Leo, T.
Smith, David.
Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

author_facet

Feng, G.
Van Dijken, Sebastiaan.
Feng, J.
Coey, J.
Leo, T.
Smith, David.

dc_source_str_mv

Journal of Applied Physics 105, 2009, 033916-1- 033916-7.

format

Villanova Faculty Authorship

author_sort

Feng, G.

dc_date_str

2008

dc_title_str

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

description

title

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

title_full

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

title_fullStr

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

title_full_unstemmed

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

title_short

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

title_sort

annealing of cofeb/mgo based single and double barrier magnetic tunnel junctions: tunnel magnetoresistance, bias dependence, and output voltage.

publishDate

2008

normalized_sort_date

2008-01-01T00:00:00Z

language

English

collection_title_sort_str

annealing of cofeb/mgo based single and double barrier magnetic tunnel junctions: tunnel magnetoresistance, bias dependence, and output voltage.

fgs.type_txt_mv

http://fedora.info/definitions/v4/repository#Resource
http://fedora.info/definitions/v4/repository#Container
http://www.w3.org/ns/ldp#Resource
http://www.w3.org/ns/ldp#Container
http://www.w3.org/ns/ldp#BasicContainer
http://www.w3.org/ns/ldp#RDFSource

fgs.createdBy_txt_mv

fedoraAdmin

relsext.hasModel_txt_mv

http://hades.library.villanova.edu:8080/rest/vudl-system:CoreModel
http://hades.library.villanova.edu:8080/rest/vudl-system:ResourceCollection
http://hades.library.villanova.edu:8080/rest/vudl-system:CollectionModel

relsext.isMemberOf_txt_mv

http://hades.library.villanova.edu:8080/rest/vudl:176064

relsext.itemID_txt_mv

oai:digital.library.villanova.edu:vudl:176080

fgs.lastModifiedBy_txt_mv

fedoraAdmin

fgs.label_txt_mv

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

relsext.sortOn_txt_mv

title

relsext.sequence_txt_mv

vudl:176064#6

fgs.createdDate_txt_mv

2013-01-22T05:16:31.404Z

relsext.hasLegacyURL_txt_mv

http://digital.library.villanova.edu/Villanova%20Digital%20Collection/Faculty%20Fulltext/Feng%20Gang/FengGang-f32d3502-6648-43f3-b660-d7cb1b5def36.xml

fgs.state_txt_mv

Active

fgs.lastModifiedDate_txt_mv

2022-08-25T18:28:21.400Z

fgs.ownerId_txt_mv

diglibEditor

has_order_str

agent.name_txt_mv

Falvey Memorial Library, Villanova University
klk

license.mdRef_str

http://digital.library.villanova.edu/copyright.html

license_str

protected

has_thumbnail_str

true

THUMBNAIL_contentDigest_digest_str

203c69e18f4f46c81e9892448d2c07cd

first_indexed

2014-01-11T22:38:07Z

last_indexed

2022-08-25T18:28:28Z

_version_

1785892959073337344

subpages

The use of this material may be subject to the copyright law of the United States (Title 17, United States Code) or other third party terms and conditions. The person using the material is responsible for any use or infringement of third party rights.

Disclaimer Of Liability

Villanova University makes no warranty, express or implied, and hereby disclaims all warranties with regard to the information and materials provided, including implied warranties of merchantability, fitness for a particular purpose, or non-infringement, and assumes no legal liability or responsibility for the accuracy, completeness, currency or usefulness of any material displayed or distributed through the Digital Library. Any use or reliance upon such information and materials is at your own risk. In no event will Villanova University be liable to you or any third party for any damages or losses whatsoever resulting from or caused by the Digital Library or its contents, or your access or use thereof.

Disclaimer Of Endorsement

Reference herein to any specific opinion, viewpoint, individual, commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement or recommendation, or any assertion or evaluation as to its validity or veracity, by Villanova University. The views and opinions of authors expressed herein do not necessarily state or reflect those of Villanova University and shall not be used for advertising or product endorsement purposes.

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

Rights Information

Disclaimer Of Liability

Disclaimer Of Endorsement

Accessibility Statement

Annealing of CoFeb/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage.

Similar Items

Rights Information

Disclaimer Of Liability

Disclaimer Of Endorsement

Accessibility Statement