Transient Switching Behavior in Silicon MOSFET RF Switches.

Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and m...

Bibliographic Details
Main Authors:	Caverly, Robert H., Manosca, Jeffrey J.
Format:	Villanova Faculty Authorship
Language:	English
Published:	2008
Online Access:	http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:175382

Main Authors:

Caverly, Robert H., Manosca, Jeffrey J.

Format:

Villanova Faculty Authorship

Language:

English

Published:

2008

Online Access:

http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:175382

The Digital Library strives to provide access to its collections and resources to the Villanova University community and the global community of scholars, subject to any intellectual property or other restrictions on use. Certain materials, such as historical documents, handwritten materials, and foreign language materials, present unique accessibility challenges and formatting limitations. If you are experiencing difficulties in accessing, viewing, or navigating the Digital Library, please contact us at digitallibrary@villanova.edu or 610.519.5271.

Transient Switching Behavior in Silicon MOSFET RF Switches.

Similar Items

Accessibility