Transient Switching Behavior in Silicon MOSFET RF Switches.

Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and m...

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Bibliographic Details
Main Authors: Caverly, Robert H., Manosca, Jeffrey J.
Format: Villanova Faculty Authorship
Published: 2008
Online Access: