Transient Switching Behavior in Silicon MOSFET RF Switches.

Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and m...

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Main Authors: Caverly, Robert H., Manosca, Jeffrey J.
Format: Villanova Faculty Authorship
Language:English
Published: 2008
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spelling Transient Switching Behavior in Silicon MOSFET RF Switches.
Caverly, Robert H.
Manosca, Jeffrey J.
Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.
2008
Villanova Faculty Authorship
vudl:175382
Proc. 8th Topical Meeting on Silicon Monolithic Integrated Circuits for RF Systems (SiRF08), 2008, 179-182.
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dc.title_txt_mv Transient Switching Behavior in Silicon MOSFET RF Switches.
dc.creator_txt_mv Caverly, Robert H.
Manosca, Jeffrey J.
dc.description_txt_mv Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.
dc.date_txt_mv 2008
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dc.source_txt_mv Proc. 8th Topical Meeting on Silicon Monolithic Integrated Circuits for RF Systems (SiRF08), 2008, 179-182.
dc.language_txt_mv en
author Caverly, Robert H.
Manosca, Jeffrey J.
spellingShingle Caverly, Robert H.
Manosca, Jeffrey J.
Transient Switching Behavior in Silicon MOSFET RF Switches.
author_facet Caverly, Robert H.
Manosca, Jeffrey J.
dc_source_str_mv Proc. 8th Topical Meeting on Silicon Monolithic Integrated Circuits for RF Systems (SiRF08), 2008, 179-182.
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author_sort Caverly, Robert H.
dc_date_str 2008
dc_title_str Transient Switching Behavior in Silicon MOSFET RF Switches.
description Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.
title Transient Switching Behavior in Silicon MOSFET RF Switches.
title_full Transient Switching Behavior in Silicon MOSFET RF Switches.
title_fullStr Transient Switching Behavior in Silicon MOSFET RF Switches.
title_full_unstemmed Transient Switching Behavior in Silicon MOSFET RF Switches.
title_short Transient Switching Behavior in Silicon MOSFET RF Switches.
title_sort transient switching behavior in silicon mosfet rf switches.
publishDate 2008
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language English
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