Staff View: GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

Bibliographic Details
Main Authors:	Drozdovski, Nikolai V., Caverly, Robert H.
Format:	Villanova Faculty Authorship
Language:	English
Published:	2002
Online Access:	http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:175361

Main Authors:

Drozdovski, Nikolai V., Caverly, Robert H.

Format:

Villanova Faculty Authorship

Language:

English

Published:

2002

Online Access:

http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:175361

id	vudl:175361
record_format	vudl
institution	Villanova University
collection	Digital Library
modeltype_str_mv	vudl-system:CollectionModel vudl-system:CoreModel vudl-system:ResourceCollection
datastream_str_mv	AGENTS STRUCTMAP THUMBNAIL PARENT-LIST LEGACY-METS PARENT-LIST-RAW LICENSE RELS-EXT PARENT-QUERY MEMBER-QUERY DC MEMBER-LIST-RAW AUDIT PROCESS-MD
hierarchytype
hierarchy_all_parents_str_mv	vudl:175345 vudl:172968 vudl:641262 vudl:3 vudl:1
sequence_vudl_175345_str	0000000006
hierarchy_top_id	vudl:641262
hierarchy_top_title	Villanova Faculty Publications
fedora_parent_id_str_mv	vudl:175345
hierarchy_first_parent_id_str	vudl:175361
hierarchy_parent_id	vudl:175345
hierarchy_parent_title	Caverly Robert
hierarchy_sequence_sort_str	0000000006
hierarchy_sequence	0000000006
spelling	GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications. Drozdovski, Nikolai V. Caverly, Robert H. Heterojunction FETs or high electron-mobility transistors (HEMTs) based on AlxGa1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in control applications. The model was verified with experimental data taken on test HEMT devices. It was experimentally established that the HEMT resistance is low for voltages of +1.0 V, and that the capacitive reactance increases for dc gate voltages below the threshold voltage of approximately -1.5 V. 2002 Villanova Faculty Authorship vudl:175361 IEEE Transactions on Microwave Theory and Techniques 50(1), January 2002, 4-8. en
dc.title_txt_mv	GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
dc.creator_txt_mv	Drozdovski, Nikolai V. Caverly, Robert H.
dc.description_txt_mv	Heterojunction FETs or high electron-mobility transistors (HEMTs) based on AlxGa1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in control applications. The model was verified with experimental data taken on test HEMT devices. It was experimentally established that the HEMT resistance is low for voltages of +1.0 V, and that the capacitive reactance increases for dc gate voltages below the threshold voltage of approximately -1.5 V.
dc.date_txt_mv	2002
dc.format_txt_mv	Villanova Faculty Authorship
dc.identifier_txt_mv	vudl:175361
dc.source_txt_mv	IEEE Transactions on Microwave Theory and Techniques 50(1), January 2002, 4-8.
dc.language_txt_mv	en
author	Drozdovski, Nikolai V. Caverly, Robert H.
spellingShingle	Drozdovski, Nikolai V. Caverly, Robert H. GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
author_facet	Drozdovski, Nikolai V. Caverly, Robert H.
dc_source_str_mv	IEEE Transactions on Microwave Theory and Techniques 50(1), January 2002, 4-8.
format	Villanova Faculty Authorship
author_sort	Drozdovski, Nikolai V.
dc_date_str	2002
dc_title_str	GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
description	Heterojunction FETs or high electron-mobility transistors (HEMTs) based on AlxGa1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in control applications. The model was verified with experimental data taken on test HEMT devices. It was experimentally established that the HEMT resistance is low for voltages of +1.0 V, and that the capacitive reactance increases for dc gate voltages below the threshold voltage of approximately -1.5 V.
title	GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title_full	GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title_fullStr	GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title_full_unstemmed	GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title_short	GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title_sort	gan-based high electron-mobility transistors for microwave and rf control applications.
publishDate	2002
normalized_sort_date	2002-01-01T00:00:00Z
language	English
collection_title_sort_str	gan-based high electron-mobility transistors for microwave and rf control applications.
relsext.hasLegacyURL_txt_mv	http://digital.library.villanova.edu/Villanova%20Digital%20Collection/Faculty%20Fulltext/Caverly%20Robert/CaverlyRobert-0ae571bd-c1a6-41f3-8ae1-73be9a3edc33.xml
relsext.itemID_txt_mv	oai:digital.library.villanova.edu:vudl:175361
relsext.hasModel_txt_mv	http://hades.library.villanova.edu:8080/rest/vudl-system:CollectionModel http://hades.library.villanova.edu:8080/rest/vudl-system:CoreModel http://hades.library.villanova.edu:8080/rest/vudl-system:ResourceCollection
fgs.type_txt_mv	http://www.w3.org/ns/ldp#Container http://www.w3.org/ns/ldp#Resource http://fedora.info/definitions/v4/repository#Resource http://fedora.info/definitions/v4/repository#Container http://www.w3.org/ns/ldp#RDFSource http://www.w3.org/ns/ldp#BasicContainer
relsext.isMemberOf_txt_mv	http://hades.library.villanova.edu:8080/rest/vudl:175345
fgs.lastModifiedDate_txt_mv	2021-04-12T19:07:47.911Z
fgs.label_txt_mv	GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
fgs.lastModifiedBy_txt_mv	fedoraAdmin
relsext.sequence_txt_mv	vudl:175345#6
fgs.ownerId_txt_mv	diglibEditor
fgs.state_txt_mv	Active
relsext.sortOn_txt_mv	title
fgs.createdBy_txt_mv	fedoraAdmin
fgs.createdDate_txt_mv	2013-01-22T04:37:25.507Z
has_order_str	no
agent.name_txt_mv	Falvey Memorial Library, Villanova University AAD
license.mdRef_str	http://digital.library.villanova.edu/copyright.html
license_str	protected
has_thumbnail_str	true
THUMBNAIL_contentDigest_digest_str	203c69e18f4f46c81e9892448d2c07cd
first_indexed	2014-01-11T23:10:42Z
last_indexed	2021-04-12T19:30:51Z
_version_	1785892968531492864
subpages

vudl:175361

record_format

vudl

institution

Villanova University

collection

Digital Library

modeltype_str_mv

vudl-system:CollectionModel
vudl-system:CoreModel
vudl-system:ResourceCollection

datastream_str_mv

AGENTS
STRUCTMAP
THUMBNAIL
PARENT-LIST
LEGACY-METS
PARENT-LIST-RAW
LICENSE
RELS-EXT
PARENT-QUERY
MEMBER-QUERY
DC
MEMBER-LIST-RAW
AUDIT
PROCESS-MD

hierarchytype

hierarchy_all_parents_str_mv

vudl:175345
vudl:172968
vudl:641262
vudl:3
vudl:1

sequence_vudl_175345_str

0000000006

hierarchy_top_id

vudl:641262

hierarchy_top_title

Villanova Faculty Publications

fedora_parent_id_str_mv

vudl:175345

hierarchy_first_parent_id_str

vudl:175361

hierarchy_parent_id

vudl:175345

hierarchy_parent_title

Caverly Robert

hierarchy_sequence_sort_str

0000000006

hierarchy_sequence

0000000006

spelling

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
Drozdovski, Nikolai V.
Caverly, Robert H.
Heterojunction FETs or high electron-mobility transistors (HEMTs) based on AlxGa1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in control applications. The model was verified with experimental data taken on test HEMT devices. It was experimentally established that the HEMT resistance is low for voltages of +1.0 V, and that the capacitive reactance increases for dc gate voltages below the threshold voltage of approximately -1.5 V.
2002
Villanova Faculty Authorship
vudl:175361
IEEE Transactions on Microwave Theory and Techniques 50(1), January 2002, 4-8.
en

dc.title_txt_mv

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

dc.creator_txt_mv

Drozdovski, Nikolai V.
Caverly, Robert H.

dc.description_txt_mv

Heterojunction FETs or high electron-mobility transistors (HEMTs) based on AlxGa1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in control applications. The model was verified with experimental data taken on test HEMT devices. It was experimentally established that the HEMT resistance is low for voltages of +1.0 V, and that the capacitive reactance increases for dc gate voltages below the threshold voltage of approximately -1.5 V.

dc.date_txt_mv

2002

dc.format_txt_mv

Villanova Faculty Authorship

dc.identifier_txt_mv

vudl:175361

dc.source_txt_mv

IEEE Transactions on Microwave Theory and Techniques 50(1), January 2002, 4-8.

dc.language_txt_mv

author

Drozdovski, Nikolai V.
Caverly, Robert H.

spellingShingle

Drozdovski, Nikolai V.
Caverly, Robert H.
GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

author_facet

Drozdovski, Nikolai V.
Caverly, Robert H.

dc_source_str_mv

IEEE Transactions on Microwave Theory and Techniques 50(1), January 2002, 4-8.

format

Villanova Faculty Authorship

author_sort

Drozdovski, Nikolai V.

dc_date_str

2002

dc_title_str

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

description

title

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

title_full

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

title_fullStr

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

title_full_unstemmed

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

title_short

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

title_sort

gan-based high electron-mobility transistors for microwave and rf control applications.

publishDate

2002

normalized_sort_date

2002-01-01T00:00:00Z

language

English

collection_title_sort_str

gan-based high electron-mobility transistors for microwave and rf control applications.

relsext.hasLegacyURL_txt_mv

http://digital.library.villanova.edu/Villanova%20Digital%20Collection/Faculty%20Fulltext/Caverly%20Robert/CaverlyRobert-0ae571bd-c1a6-41f3-8ae1-73be9a3edc33.xml

relsext.itemID_txt_mv

oai:digital.library.villanova.edu:vudl:175361

relsext.hasModel_txt_mv

http://hades.library.villanova.edu:8080/rest/vudl-system:CollectionModel
http://hades.library.villanova.edu:8080/rest/vudl-system:CoreModel
http://hades.library.villanova.edu:8080/rest/vudl-system:ResourceCollection

fgs.type_txt_mv

http://www.w3.org/ns/ldp#Container
http://www.w3.org/ns/ldp#Resource
http://fedora.info/definitions/v4/repository#Resource
http://fedora.info/definitions/v4/repository#Container
http://www.w3.org/ns/ldp#RDFSource
http://www.w3.org/ns/ldp#BasicContainer

relsext.isMemberOf_txt_mv

http://hades.library.villanova.edu:8080/rest/vudl:175345

fgs.lastModifiedDate_txt_mv

2021-04-12T19:07:47.911Z

fgs.label_txt_mv

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

fgs.lastModifiedBy_txt_mv

fedoraAdmin

relsext.sequence_txt_mv

vudl:175345#6

fgs.ownerId_txt_mv

diglibEditor

fgs.state_txt_mv

Active

relsext.sortOn_txt_mv

title

fgs.createdBy_txt_mv

fedoraAdmin

fgs.createdDate_txt_mv

2013-01-22T04:37:25.507Z

has_order_str

agent.name_txt_mv

Falvey Memorial Library, Villanova University
AAD

license.mdRef_str

http://digital.library.villanova.edu/copyright.html

license_str

protected

has_thumbnail_str

true

THUMBNAIL_contentDigest_digest_str

203c69e18f4f46c81e9892448d2c07cd

first_indexed

2014-01-11T23:10:42Z

last_indexed

2021-04-12T19:30:51Z

_version_

1785892968531492864

subpages

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GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

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