GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.

Heterojunction FETs or high electron-mobility transistors (HEMTs) based on AlxGa1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in control applications. The model was verified with experimental data taken on test HEMT devices. It was experimentally established that the HEMT resistance is low for voltages of +1.0 V, and that the capacitive reactance increases for dc gate voltages below the threshold voltage of approximately -1.5 V.

Main Author: Drozdovski, Nikolai V.
Other Authors: Caverly, Robert H.
Language: English
Published: 2002
Online Access: http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:175361
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dc_source_str_mv IEEE Transactions on Microwave Theory and Techniques 50(1), January 2002, 4-8.
author Drozdovski, Nikolai V.
author_s Drozdovski, Nikolai V.
spellingShingle Drozdovski, Nikolai V.
GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
author-letter Drozdovski, Nikolai V.
author_sort_str Drozdovski, Nikolai V.
author2 Caverly, Robert H.
author2Str Caverly, Robert H.
dc_title_str GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title_short GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title_full GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title_fullStr GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
title_full_unstemmed GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
collection_title_sort_str gan-based high electron-mobility transistors for microwave and rf control applications.
title_sort gan-based high electron-mobility transistors for microwave and rf control applications.
description Heterojunction FETs or high electron-mobility transistors (HEMTs) based on AlxGa1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in control applications. The model was verified with experimental data taken on test HEMT devices. It was experimentally established that the HEMT resistance is low for voltages of +1.0 V, and that the capacitive reactance increases for dc gate voltages below the threshold voltage of approximately -1.5 V.
publishDate 2002
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dc.title GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications.
dc.creator Drozdovski, Nikolai V.
Caverly, Robert H.
dc.description Heterojunction FETs or high electron-mobility transistors (HEMTs) based on AlxGa1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in control applications. The model was verified with experimental data taken on test HEMT devices. It was experimentally established that the HEMT resistance is low for voltages of +1.0 V, and that the capacitive reactance increases for dc gate voltages below the threshold voltage of approximately -1.5 V.
dc.date 2002
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dc.source IEEE Transactions on Microwave Theory and Techniques 50(1), January 2002, 4-8.
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