Gallium Nitride: Use in high power control applications.

The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.

Main Author: Caverly, Robert H.
Other Authors: Drozdovski, Nikolai V., Joye, Colin., Quinn, Michael.
Format: Villanova Faculty Authorship
Language: English
Published: 2002
Online Access: http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:175358
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dc_source_str_mv IEEE GaAs Digest, 2002, 131-134.
author Caverly, Robert H.
author_facet_str_mv Caverly, Robert H.
Drozdovski, Nikolai V.
Joye, Colin.
Quinn, Michael.
author_or_contributor_facet_str_mv Caverly, Robert H.
Drozdovski, Nikolai V.
Joye, Colin.
Quinn, Michael.
author_s Caverly, Robert H.
spellingShingle Caverly, Robert H.
Gallium Nitride: Use in high power control applications.
author-letter Caverly, Robert H.
author_sort_str Caverly, Robert H.
author2 Drozdovski, Nikolai V.
Joye, Colin.
Quinn, Michael.
author2Str Drozdovski, Nikolai V.
Joye, Colin.
Quinn, Michael.
dc_title_str Gallium Nitride: Use in high power control applications.
title Gallium Nitride: Use in high power control applications.
title_short Gallium Nitride: Use in high power control applications.
title_full Gallium Nitride: Use in high power control applications.
title_fullStr Gallium Nitride: Use in high power control applications.
title_full_unstemmed Gallium Nitride: Use in high power control applications.
collection_title_sort_str gallium nitride: use in high power control applications.
title_sort gallium nitride: use in high power control applications.
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description The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.
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dc.title Gallium Nitride: Use in high power control applications.
dc.creator Caverly, Robert H.
Drozdovski, Nikolai V.
Joye, Colin.
Quinn, Michael.
dc.description The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.
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