Distortion Behavior in Wireless and RF MOS-based Switches.

RF MOS devices are finding increased use in a variety of wireless systems that require a high degree of functionality, low dc power consumption and easy integration with digital technology. This paper shows the effects of device size and technology (bulk versus SOI) on MOSFET nonlinearities in RF co...

Bibliographic Details
Main Author:	Caverly, Robert H.
Format:	Villanova Faculty Authorship
Language:	English
Published:	2006
Online Access:	http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:175352

Main Author:

Caverly, Robert H.

Format:

Villanova Faculty Authorship

Language:

English

Published:

2006

Online Access:

http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:175352

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Distortion Behavior in Wireless and RF MOS-based Switches.

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