Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts*.
The Schottky behaviour of Ni/Au contact on n-GaN was investigated under various annealing conditions by current-voltage (I-V ) measurements. A non-linear fitting method was used to extract the contact parameters from the I-V characteristic curves. Experimental results indicate that high quality Schottky contact with a barrier height and ideality factor of 0.86+/- 0.02 eV and 1.19+/-0.02 eV, respectively, can be obtained under 5 min annealing at 600°C in N2 ambience.
|Main Author:||Sun, Yuanping.|
|Other Authors:||Shen, X., Wang, J., Zhao, D., Feng, G., Fu, Y., Zhang, S., Zhang, Z., Feng, Z., Bai, Y., Yang, Hui.|