Thermal annealing behaviour of Ni/Au on n-GaN Schottky contacts*.

The Schottky behaviour of Ni/Au contact on n-GaN was investigated under various annealing conditions by current-voltage (I-V ) measurements. A non-linear fitting method was used to extract the contact parameters from the I-V characteristic curves. Experimental results indicate that high quality Schottky contact with a barrier height and ideality factor of 0.86+/- 0.02 eV and 1.19+/-0.02 eV, respectively, can be obtained under 5 min annealing at 600°C in N2 ambience.

Main Author: Sun, Yuanping.
Other Authors: Shen, X., Wang, J., Zhao, D., Feng, G., Fu, Y., Zhang, S., Zhang, Z., Feng, Z., Bai, Y., Yang, Hui.
Language: English
Published: 2002
Online Access: http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:176170