Holdings: Bias voltage dependance of inverted magnetoresistance on the annealing temperature in MgO-based magnetictunnel junctions.

Bias voltage dependance of inverted magnetoresistance on the annealing temperature in MgO-based magnetictunnel junctions.

MgO-basedmagnetictunneljunctions(MTJs)withalayersequenceIr22Mn78 or Fe50Mn50 (10nm)/CoFe (2 nm)/Ru(0.85nm)/CoFeB(0.5pto2 nm)/MgO(2.5nm)/CoFeB(3nm)havebeenfabricated.Thebias voltagedependenceoftunnelingmagnetoresistance(TMR)isgivenasafunctionoftheannealing temperaturefortheseMTJs,whichshowstheTMRrati...

Bibliographic Details
Main Authors:	Feng, J., Feng, Gen., Ma, Q., Han, X., Coey, J.
Format:	Villanova Faculty Authorship
Language:	English
Published:	2009
Online Access:	http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:176089

Main Authors:

Feng, J., Feng, Gen., Ma, Q., Han, X., Coey, J.

Format:

Villanova Faculty Authorship

Language:

English

Published:

2009

Online Access:

http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:176089

The Digital Library strives to provide access to its collections and resources to the Villanova University community and the global community of scholars, subject to any intellectual property or other restrictions on use. Certain materials, such as historical documents, handwritten materials, and foreign language materials, present unique accessibility challenges and formatting limitations. If you are experiencing difficulties in accessing, viewing, or navigating the Digital Library, please contact us at digitallibrary@villanova.edu or 610.519.5271.

Bias voltage dependance of inverted magnetoresistance on the annealing temperature in MgO-based magnetictunnel junctions.

Internet

Accessibility

Bias voltage dependance of inverted magnetoresistance on the annealing temperature in MgO-based magnetictunnel junctions.

Internet

Similar Items

Accessibility