Bias voltage dependance of inverted magnetoresistance on the annealing temperature in MgO-based magnetictunnel junctions.
MgO-basedmagnetictunneljunctions(MTJs)withalayersequenceIr22Mn78 or Fe50Mn50 (10nm)/CoFe (2 nm)/Ru(0.85nm)/CoFeB(0.5pto2 nm)/MgO(2.5nm)/CoFeB(3nm)havebeenfabricated.Thebias voltagedependenceoftunnelingmagnetoresistance(TMR)isgivenasafunctionoftheannealing temperaturefortheseMTJs,whichshowstheTMRrati...
Main Authors: | , , , , |
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Format: | |
Language: | English |
Published: |
2009
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Online Access: | http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:176089 |