Bias voltage dependance of inverted magnetoresistance on the annealing temperature in MgO-based magnetictunnel junctions.

MgO-basedmagnetictunneljunctions(MTJs)withalayersequenceIr22Mn78 or Fe50Mn50 (10nm)/CoFe (2 nm)/Ru(0.85nm)/CoFeB(0.5pto2 nm)/MgO(2.5nm)/CoFeB(3nm)havebeenfabricated.Thebias voltagedependenceoftunnelingmagnetoresistance(TMR)isgivenasafunctionoftheannealing temperaturefortheseMTJs,whichshowstheTMRratiochangesitssignfrominvertedtonormalata criticalbiasvoltage(VC) whenanunbalancedsyntheticantiferromagneticstackCoFe/Ru/CoFeBisused. VCs changewiththethicknessofthepinnedCoFeBandannealingtemperature,whichimpliesonecan achieve different VCs byartificialcontrol.Theasymmetric VC valuessuggestthatastrongdensity-of- states modificationoccursatbottomoxide/ferromagnetinterface.

Main Author: Feng, J.
Other Authors: Feng, Gen., Ma, Q., Han, X., Coey, J.
Language: English
Published: 2009
Online Access: http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:176089