Bias voltage dependance of inverted magnetoresistance on the annealing temperature in MgO-based magnetictunnel junctions.
MgO-basedmagnetictunneljunctions(MTJs)withalayersequenceIr22Mn78 or Fe50Mn50 (10nm)/CoFe (2 nm)/Ru(0.85nm)/CoFeB(0.5pto2 nm)/MgO(2.5nm)/CoFeB(3nm)havebeenfabricated.Thebias voltagedependenceoftunnelingmagnetoresistance(TMR)isgivenasafunctionoftheannealing temperaturefortheseMTJs,whichshowstheTMRratiochangesitssignfrominvertedtonormalata criticalbiasvoltage(VC) whenanunbalancedsyntheticantiferromagneticstackCoFe/Ru/CoFeBisused. VCs changewiththethicknessofthepinnedCoFeBandannealingtemperature,whichimpliesonecan achieve different VCs byartificialcontrol.Theasymmetric VC valuessuggestthatastrongdensity-of- states modificationoccursatbottomoxide/ferromagnetinterface.
| Main Author: | Feng, J. |
|---|---|
| Other Authors: | Feng, Gen., Ma, Q., Han, X., Coey, J. |
| Language: | English |
| Published: |
2009
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| Online Access: |
http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:176089 |