Reactance influence on PIN diode attenuators.

The reactive component of a PIN diode is known to be a function of current due to conductivity modulation in the I-region. This reactive component can negatively influence predicted attenuation levels in PIN diode attenuators if not properly accounted for. A figure of merit based on the PIN diode parameters, DC forward current, and operation frequency, is proposed that determines the operating conditions where this reactive component can be safely ignored. Simulations and measurement data on PIN diodes of various I-region widths verify the proposed figure of merit.

Main Author:	Caverly, Robert H.
Other Authors:	Drozdovski, Nikolai V.
Language:	English
Published:	2006
Online Access:	http://ezproxy.villanova.edu/login?url=https://digital.library.villanova.edu/Item/vudl:175373