Transient Switching Behavior in Silicon MOSFET RF Switches.

Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.

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Main Author: Caverly, Robert H.
Other Authors: Manosca, Jeffrey J.
Language: English
Published: 2008
Online Access: http://ezproxy.villanova.edu/login?url=http://digital.library.villanova.edu/Item/vudl:175382
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