Gallium Nitride: Use in high power control applications.

The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.

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Main Author: Caverly, Robert H.
Other Authors: Drozdovski, Nikolai V., Joye, Colin., Quinn, Michael.
Language: English
Published: 2002
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