Gallium Nitride: Use in high power control applications.
The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.
|Main Author:||Caverly, Robert H.|
|Other Authors:||Drozdovski, Nikolai V., Joye, Colin., Quinn, Michael.|
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