Gallium Nitride: Use in high power control applications.

The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.

Saved in:
Main Author: Caverly, Robert H.
Other Authors: Drozdovski, Nikolai V., Joye, Colin., Quinn, Michael.
Language: English
Published: 2002
Online Access: http://ezproxy.villanova.edu/login?url=http://digital.library.villanova.edu/Item/vudl:175358